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oai:uvadoc.uva.es:10324/338922025-03-26T19:45:07Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1272col_10324_28028

López Martín, Pedro Aboy Cebrián, María Muñoz, I. Santos Tejido, Iván Marqués Cuesta, Luis Alberto Couso, Carlos Ullán, Miguel Pelaz Montes, María Lourdes 2019-01-10T12:50:41Z 2019-01-10T12:50:41Z 2019 2018 Spanish Conference on Electron Devices (CDE). Proceedings, 14-16 Nov. 2018, Salamanca. 978-1-5386-5779-9 http://uvadoc.uva.es/handle/10324/33892 10.1109/CDE.2018.8596953 Electronic devices operating in harsh radiation environments must withstand high radiation levels with minimal performance degradation. Recent experiments on the radiation hardness of a new vertical p-type JFET power switch have shown a significant reduction of forward drain current under non-ionizing conditions. In this work, atomistic simulations are used to study the impact of irradiation-induced displacement damage on forward characteristics. Damage models have been updated to produce a better description of damage-dopant interactions at RT. Our results show that excess self-interstitials produced by irradiation deactivate a significant amount of B atoms, thus reducing the effective dopant concentration. eng info:eu-repo/semantics/openAccess © 2019 IEEE IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions info:eu-repo/semantics/conferenceObject