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oai:uvadoc.uva.es:10324/338922025-03-26T19:45:07Zcom_10324_1148com_10324_931com_10324_894com_10324_28025com_10324_954col_10324_1272col_10324_28028

IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions López Martín, Pedro Aboy Cebrián, María Muñoz, I. Santos Tejido, Iván Marqués Cuesta, Luis Alberto Couso, Carlos Ullán, Miguel Pelaz Montes, María Lourdes Producción Científica Electronic devices operating in harsh radiation environments must withstand high radiation levels with minimal performance degradation. Recent experiments on the radiation hardness of a new vertical p-type JFET power switch have shown a significant reduction of forward drain current under non-ionizing conditions. In this work, atomistic simulations are used to study the impact of irradiation-induced displacement damage on forward characteristics. Damage models have been updated to produce a better description of damage-dopant interactions at RT. Our results show that excess self-interstitials produced by irradiation deactivate a significant amount of B atoms, thus reducing the effective dopant concentration. 2019-01-10T12:50:41Z 2019-01-10T12:50:41Z 2019 info:eu-repo/semantics/conferenceObject 2018 Spanish Conference on Electron Devices (CDE). Proceedings, 14-16 Nov. 2018, Salamanca. 978-1-5386-5779-9 http://uvadoc.uva.es/handle/10324/33892 10.1109/CDE.2018.8596953 eng https://ieeexplore.ieee.org/document/8596953 info:eu-repo/semantics/openAccess © 2019 IEEE Institute of Electrical and Electronics Engineers (IEEE).