<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-04-23T21:10:34Z</responseDate><request verb="GetRecord" identifier="oai:uvadoc.uva.es:10324/44637" metadataPrefix="mods">https://uvadoc.uva.es/oai/request</request><GetRecord><record><header><identifier>oai:uvadoc.uva.es:10324/44637</identifier><datestamp>2021-06-24T07:23:04Z</datestamp><setSpec>com_10324_43510</setSpec><setSpec>com_10324_954</setSpec><setSpec>com_10324_894</setSpec><setSpec>col_10324_43514</setSpec></header><metadata><mods:mods xmlns:mods="http://www.loc.gov/mods/v3" xmlns:doc="http://www.lyncode.com/xoai" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-1.xsd">
<mods:name>
<mods:namePart>Dueñas Carazo, Salvador</mods:namePart>
</mods:name>
<mods:name>
<mods:namePart>Castán Lanaspa, María Helena</mods:namePart>
</mods:name>
<mods:extension>
<mods:dateAvailable encoding="iso8601">2021-01-07T13:36:30Z</mods:dateAvailable>
</mods:extension>
<mods:extension>
<mods:dateAccessioned encoding="iso8601">2021-01-07T13:36:30Z</mods:dateAccessioned>
</mods:extension>
<mods:originInfo>
<mods:dateIssued encoding="iso8601">2018</mods:dateIssued>
</mods:originInfo>
<mods:identifier type="citation">Dueñas, Salvador; Castán, Helena. Capacitance Spectroscopy for MOS Systems. Capacitance Spectroscopy of Semiconductors, edited by Jian V. Li, Giorgio Ferrari. 1st Edition, 2018, Jenny Stanford Publishing. https://doi.org/10.1201/b22451</mods:identifier>
<mods:identifier type="isbn">9781315150130</mods:identifier>
<mods:identifier type="uri">http://uvadoc.uva.es/handle/10324/44637</mods:identifier>
<mods:identifier type="publicationtitle">Capacitance Spectroscopy of Semiconductors</mods:identifier>
<mods:abstract>Capacitance studies of metal–oxide–semiconductor (MOS) capacitors have been used since the early 60s of the past century to investigates the interface surface states, oxide charge and electron and ion phenomena in these structures. This chapter provides detailed information about the theoretical basis, and examples of application of capacitance spectroscopy techniques in a variety of MOS systems.</mods:abstract>
<mods:language>
<mods:languageTerm>eng</mods:languageTerm>
</mods:language>
<mods:accessCondition type="useAndReproduction">info:eu-repo/semantics/restrictedAccess</mods:accessCondition>
<mods:titleInfo>
<mods:title>Capacitance Spectroscopy for MOS Systems</mods:title>
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<mods:genre>info:eu-repo/semantics/bookPart</mods:genre>
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