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oai:uvadoc.uva.es:10324/446372021-06-24T07:23:04Zcom_10324_43510com_10324_954com_10324_894col_10324_43514

Capacitance Spectroscopy for MOS Systems Dueñas Carazo, Salvador Castán Lanaspa, María Helena Producción Científica Capacitance studies of metal–oxide–semiconductor (MOS) capacitors have been used since the early 60s of the past century to investigates the interface surface states, oxide charge and electron and ion phenomena in these structures. This chapter provides detailed information about the theoretical basis, and examples of application of capacitance spectroscopy techniques in a variety of MOS systems. 2021-01-07T13:36:30Z 2021-01-07T13:36:30Z 2018 info:eu-repo/semantics/bookPart Dueñas, Salvador; Castán, Helena. Capacitance Spectroscopy for MOS Systems. Capacitance Spectroscopy of Semiconductors, edited by Jian V. Li, Giorgio Ferrari. 1st Edition, 2018, Jenny Stanford Publishing. https://doi.org/10.1201/b22451 9781315150130 http://uvadoc.uva.es/handle/10324/44637 Capacitance Spectroscopy of Semiconductors eng https://www.taylorfrancis.com/books/capacitance-spectroscopy-semiconductors-jian-li-giorgio-ferrari/e/10.1201/b22451 info:eu-repo/semantics/restrictedAccess Jenny Stanford Publishing