2026-04-22T21:55:37Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/446472021-06-24T07:23:11Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

Kalam, Kristjan Seemen, Helina Ritslaid, Peeter Rähn, Mihkel Tamm, Aile Kukli, Kaupo Kasikov, Aarne Link, Joosep Stern, Raivo Dueñas Carazo, Salvador Castán Lanaspa, María Helena García García, Héctor 2021-01-08T09:40:53Z 2021-01-08T09:40:53Z 2018 Beilstein Journal of Nanotechnology, 2018, vol. 9. p. 119-128 2190-4286 http://uvadoc.uva.es/handle/10324/44647 10.3762/bjnano.9.14 Thin solid films consisting of ZrO2 and Fe2O3 were grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO2 were stabilized by Fe2O3 doping. The number of alternating ZrO2 and Fe2O3 deposition cycles were varied in order to achieve films with different cation ratios. The influence of annealing on the composition and structure of the thin films was investigated. Additionally, the influence of composition and structure on electrical and magnetic properties was studied. Several samples exhibited a measurable saturation magnetization and most of the samples exhibited a charge polarization. Both phenomena were observed in the sample with a Zr/Fe atomic ratio of 2.0. eng info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2018 Beilstein-Institut Attribution-NonCommercial-NoDerivatives 4.0 Internacional Atomic layer deposition and properties of ZrO2/Fe2O3 thin films info:eu-repo/semantics/article