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oai:uvadoc.uva.es:10324/446652021-06-24T07:23:18Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

Atomic layer deposition and properties of HfO2-Al2O3 nanolaminates Kukli, Kaupo Kemell, Marianna Castán Lanaspa, María Helena Dueñas Carazo, Salvador Seemen, Helina Rähn, Mihkel Link, Joosep Stern, Raivo Ritala, Mikko Leskelä, Markku Producción Científica Nanocrystalline HfO2:Al2O3 mixture films and nanolaminates were grown by atomic layer deposition at 350°C from metal chloride precursors and water. Formation of metastable HfO2 polymorphs versus monoclinic phase was affected by the relative amount and thickness of constituent oxide layers. The films exhibited saturative magnetization and charge polarization in externally applied fields at room temperature. The films also demonstrated resistive switching behavior with considerable window between low and high resistance states. 2021-01-08T12:21:09Z 2021-01-08T12:21:09Z 2018 info:eu-repo/semantics/article ECS Journal of Solid State Science and Technology, 2018, vol. 7, n. 9. p. 501-508 2162-8777 http://uvadoc.uva.es/handle/10324/44665 10.1149/2.0261809jss eng https://iopscience.iop.org/article/10.1149/2.0261809jss info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2018 IOP Publishing Attribution-NonCommercial-NoDerivatives 4.0 Internacional IOP Publishing SI