2026-05-05T10:08:47Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/446672025-01-21T12:26:40Zcom_10324_43510com_10324_954com_10324_894col_10324_43515

00925njm 22002777a 4500 dc Dueñas Carazo, Salvador author Castán Lanaspa, María Helena author González Ossorio, Óscar author Domínguez, Leidy Azucena author García García, Héctor author Kalam, Kristjan author Kukli, Kaupo author Ritala, Mikko author Leskelä, Markku author 2017 The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the intermediate states between the high and low resistance ones was achieved, demonstrating suitability to analog and neuromorphic applications. Admittance memory cycles provide relevant information about the switching mechanism, in which the existence of two different metallic species in the dielectric seems to play an important role. 2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS). Barcelona: IEE Xplore, 2017, 4 p. 978-1-5386-5108-7 http://uvadoc.uva.es/handle/10324/44667 10.1109/DCIS.2017.8311627 Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices