2026-04-28T20:53:44Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/446672025-01-21T12:26:40Zcom_10324_43510com_10324_954com_10324_894col_10324_43515

Dueñas Carazo, Salvador Castán Lanaspa, María Helena González Ossorio, Óscar Domínguez, Leidy Azucena García García, Héctor Kalam, Kristjan Kukli, Kaupo Ritala, Mikko Leskelä, Markku 2021-01-08T13:23:27Z 2021-01-08T13:23:27Z 2017 2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS). Barcelona: IEE Xplore, 2017, 4 p. 978-1-5386-5108-7 http://uvadoc.uva.es/handle/10324/44667 10.1109/DCIS.2017.8311627 The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the intermediate states between the high and low resistance ones was achieved, demonstrating suitability to analog and neuromorphic applications. Admittance memory cycles provide relevant information about the switching mechanism, in which the existence of two different metallic species in the dielectric seems to play an important role. eng info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2017 IEE Xplore Attribution-NonCommercial-NoDerivatives 4.0 Internacional Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices info:eu-repo/semantics/conferenceObject