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González Ossorio, Óscar Dueñas Carazo, Salvador Castán Lanaspa, María Helena Tamm, Aile Kalam, Kristjan Seemen, Helina Kukli, Kaupo 2021-01-11T10:00:25Z 2021-01-11T10:00:25Z 2018 2018 Spanish Conference on Electron Devices (CDE). Salamanca, Spain: IEEE Xplore, 2018 978-1-5386-5779-9 http://uvadoc.uva.es/handle/10324/44677 10.1109/CDE.2018.8596925 Producción Científica In this work we study the resistive switching properties of ZrO 2 -HfO 2 based Metal-Insulator-Metal (MIM) devices. We observed different intermediate states and an overall good repetitiveness, expressed in terms of DC and AC parameters. Thin films consisting of mixtures of ZrO 2 and HfO 2 were grown by atomic layer deposition (ALD) on planar Si(100) and TiN substrates by alternately applying certain amounts of constituent binary oxide growth cycles. The experimental results revealed that zirconium oxide rich films provide better resistive switching behavior than pure zirconium oxide or hafnium oxide rich layers. Ministerio de Ciencia, Innovación y Universidades (grant TEC2017-84321- C4-2-R) Fondo Europeo de Desarrollo Regional (project TK134) 4 p. application/pdf eng IEEE Xplore info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2018 IEEE Xplore Attribution-NonCommercial-NoDerivatives 4.0 Internacional Electrical characterization Caracterización eléctrica Atomic layer deposition Deposición atómica de capas Resistive switching Conmutación resistiva Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films 2018 Spanish Conference on Electron Devices (CDE) info:eu-repo/semantics/conferenceObject info:eu-repo/semantics/publishedVersion https://ieeexplore.ieee.org/document/8596925