2026-04-26T07:15:47Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/446772021-06-24T07:23:07Zcom_10324_43510com_10324_954com_10324_894col_10324_43515
Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films
González Ossorio, Óscar
Dueñas Carazo, Salvador
Castán Lanaspa, María Helena
Tamm, Aile
Kalam, Kristjan
Seemen, Helina
Kukli, Kaupo
Producción Científica
In this work we study the resistive switching properties of ZrO 2 -HfO 2 based Metal-Insulator-Metal (MIM) devices. We observed different intermediate states and an overall good repetitiveness, expressed in terms of DC and AC parameters. Thin films consisting of mixtures of ZrO 2 and HfO 2 were grown by atomic layer deposition (ALD) on planar Si(100) and TiN substrates by alternately applying certain amounts of constituent binary oxide growth cycles. The experimental results revealed that zirconium oxide rich films provide better resistive switching behavior than pure zirconium oxide or hafnium oxide rich layers.
2021-01-11
2021-01-11
2018
info:eu-repo/semantics/conferenceObject
2018 Spanish Conference on Electron Devices (CDE). Salamanca, Spain: IEEE Xplore, 2018
978-1-5386-5779-9
http://uvadoc.uva.es/handle/10324/44677
10.1109/CDE.2018.8596925
eng
https://ieeexplore.ieee.org/document/8596925
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
© 2018 IEEE Xplore
Attribution-NonCommercial-NoDerivatives 4.0 Internacional
IEEE Xplore