2026-04-27T20:16:54Zhttps://uvadoc.uva.es/oai/request
oai:uvadoc.uva.es:10324/446772021-06-24T07:23:07Zcom_10324_43510com_10324_954com_10324_894col_10324_43515
UVaDOC author González Ossorio, Óscar author Dueñas Carazo, Salvador author Castán Lanaspa, María Helena author Tamm, Aile author Kalam, Kristjan author Seemen, Helina author Kukli, Kaupo 2021-01-11T10:00:25Z 2021-01-11T10:00:25Z 2018 2018 Spanish Conference on Electron Devices (CDE). Salamanca, Spain: IEEE Xplore, 2018 978-1-5386-5779-9 http://uvadoc.uva.es/handle/10324/44677 10.1109/CDE.2018.8596925 In this work we study the resistive switching properties of ZrO 2 -HfO 2 based Metal-Insulator-Metal (MIM) devices. We observed different intermediate states and an overall good repetitiveness, expressed in terms of DC and AC parameters. Thin films consisting of mixtures of ZrO 2 and HfO 2 were grown by atomic layer deposition (ALD) on planar Si(100) and TiN substrates by alternately applying certain amounts of constituent binary oxide growth cycles. The experimental results revealed that zirconium oxide rich films provide better resistive switching behavior than pure zirconium oxide or hafnium oxide rich layers. eng Attribution-NonCommercial-NoDerivatives 4.0 Internacional Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films info:eu-repo/semantics/conferenceObject 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URL https://uvadoc.uva.es/bitstream/10324/44677/1/Resistive-switching-properties.pdf File MD5 69bebbd5ef8bf801dfd45260e3585386 303538 application/pdf Resistive-switching-properties.pdf