2026-04-14T18:30:47Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/446772021-06-24T07:23:07Zcom_10324_43510com_10324_954com_10324_894col_10324_43515

González Ossorio, Óscar Dueñas Carazo, Salvador Castán Lanaspa, María Helena Tamm, Aile Kalam, Kristjan Seemen, Helina Kukli, Kaupo 2021-01-11T10:00:25Z 2021-01-11T10:00:25Z 2018 2018 Spanish Conference on Electron Devices (CDE). Salamanca, Spain: IEEE Xplore, 2018 978-1-5386-5779-9 http://uvadoc.uva.es/handle/10324/44677 10.1109/CDE.2018.8596925 In this work we study the resistive switching properties of ZrO 2 -HfO 2 based Metal-Insulator-Metal (MIM) devices. We observed different intermediate states and an overall good repetitiveness, expressed in terms of DC and AC parameters. Thin films consisting of mixtures of ZrO 2 and HfO 2 were grown by atomic layer deposition (ALD) on planar Si(100) and TiN substrates by alternately applying certain amounts of constituent binary oxide growth cycles. The experimental results revealed that zirconium oxide rich films provide better resistive switching behavior than pure zirconium oxide or hafnium oxide rich layers. eng info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2018 IEEE Xplore Attribution-NonCommercial-NoDerivatives 4.0 Internacional Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films info:eu-repo/semantics/conferenceObject