2026-04-28T19:49:43Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/449192021-06-24T07:23:34Zcom_10324_43510com_10324_954com_10324_894col_10324_43513
Study of the influence of the dielectric composition of Al/Ti/ZrO2 : Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications
Castán Lanaspa, María Helena
Dueñas Carazo, Salvador
Kukli, Kaupo
Kemell, Marianna
Ritala, Mikko
Leskelä, Markku
Producción Científica
The memory behavior of Al/Ti/ZrO2 : Al2O3/TiN/Si/Al devices is investigated in this work. They are adequate to be used as resistive switching memories, with two clearly different states. Besides, intermediate states are also accessible in a controllable manner. The electrical characterization in terms of admittance parameters provides relevant complementary information. The cation ratio influences the memory maps and can be changed to obtain specifically sized shape of the maps.
2021-01-12
2021-01-12
2018
info:eu-repo/semantics/article
ECS Transactions, 2018, vol. 85, n. 8. 6 p.
1938-6737
http://uvadoc.uva.es/handle/10324/44919
10.1149/08508.0143ecst
eng
https://iopscience.iop.org/article/10.1149/08508.0143ecst
info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
© 2018 IOP Publishing
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