2026-04-28T21:05:42Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/449192021-06-24T07:23:34Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

Castán Lanaspa, María Helena Dueñas Carazo, Salvador Kukli, Kaupo Kemell, Marianna Ritala, Mikko Leskelä, Markku 2021-01-12T08:07:31Z 2021-01-12T08:07:31Z 2018 ECS Transactions, 2018, vol. 85, n. 8. 6 p. 1938-6737 http://uvadoc.uva.es/handle/10324/44919 10.1149/08508.0143ecst The memory behavior of Al/Ti/ZrO2 : Al2O3/TiN/Si/Al devices is investigated in this work. They are adequate to be used as resistive switching memories, with two clearly different states. Besides, intermediate states are also accessible in a controllable manner. The electrical characterization in terms of admittance parameters provides relevant complementary information. The cation ratio influences the memory maps and can be changed to obtain specifically sized shape of the maps. eng info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2018 IOP Publishing Attribution-NonCommercial-NoDerivatives 4.0 Internacional Study of the influence of the dielectric composition of Al/Ti/ZrO2 : Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications info:eu-repo/semantics/article