2026-04-27T21:26:38Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/451722021-06-24T07:23:43Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

Kukli, Kaupo Kemell, Marianna Heikkilä, Mikko J Castán Lanaspa, María Helena Dueñas Carazo, Salvador Mizohata, Kenichiro Ritala, Mikko Leskelä, Markku 2021-02-01T10:47:23Z 2021-02-01T10:47:23Z 2020 Nanotechnology, 2020, Volume 31, Number 19 0957-4484 http://uvadoc.uva.es/handle/10324/45172 10.1088/1361-6528/ab6fd6 195713 19 Nanotechnology 31 1361-6528 Producción Científica Amorphous SiO2–Nb2O5 nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 °C from Nb(OC2H5)5, Si2(NHC2H5)6, and O3 to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.11–7.20. After optimizing the composition, resistive switching properties could be observed in the form of characteristic current–voltage behavior. Switching parameters in the conventional regime were well defined only in a SiO2:Nb2O5 mixture at certain, optimized, composition with Nb:Si atomic ratio of 0.13, whereas low-reading voltage measurements allowed recording memory effects in a wider composition range. Ministerio de Economía, Industria y Competitividad, FEDER program (TEC2017-84321-C4-2-R) application/pdf eng IOP Publishing info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2020 IOP Publishing Attribution-NonCommercial-NoDerivatives 4.0 Internacional Deposición de capa atómica Atomic layer deposition 2202 Electromagnetismo Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion https://iopscience.iop.org/article/10.1088/1361-6528/ab6fd6 SI