<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-05-05T11:18:09Z</responseDate><request verb="GetRecord" identifier="oai:uvadoc.uva.es:10324/46388" metadataPrefix="dim">https://uvadoc.uva.es/oai/request</request><GetRecord><record><header><identifier>oai:uvadoc.uva.es:10324/46388</identifier><datestamp>2021-06-24T07:19:13Z</datestamp><setSpec>com_10324_28025</setSpec><setSpec>com_10324_954</setSpec><setSpec>com_10324_894</setSpec><setSpec>com_10324_1148</setSpec><setSpec>com_10324_931</setSpec><setSpec>col_10324_28027</setSpec><setSpec>col_10324_1271</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:doc="http://www.lyncode.com/xoai" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
<dim:field mdschema="dc" element="contributor" qualifier="author" authority="e7e3f53928115fd3" confidence="500" orcid_id="0000-0002-9269-4331">Marqués Cuesta, Luis Alberto</dim:field>
<dim:field mdschema="dc" element="contributor" qualifier="author" authority="fb4b3f5fdfcd2dfe" confidence="500" orcid_id="0000-0001-6419-6071">Aboy Cebrián, María</dim:field>
<dim:field mdschema="dc" element="contributor" qualifier="author" authority="1bbcebfb6b3c8b86" confidence="500" orcid_id="0000-0002-9905-314X">López Martín, Pedro</dim:field>
<dim:field mdschema="dc" element="contributor" qualifier="author" authority="3e5db6ec0245806a" confidence="500" orcid_id="0000-0003-1388-4346">Santos Tejido, Iván</dim:field>
<dim:field mdschema="dc" element="contributor" qualifier="author" authority="2d9403b4c6f03698" confidence="500" orcid_id="0000-0001-7181-1079">Pelaz Montes, María Lourdes</dim:field>
<dim:field mdschema="dc" element="contributor" qualifier="author" authority="6d08a47a-87ad-4f7a-a968-9b8fc51a3217" confidence="500" orcid_id="">Fisicaro, Giuseppe</dim:field>
<dim:field mdschema="dc" element="date" qualifier="accessioned">2021-04-27T12:46:35Z</dim:field>
<dim:field mdschema="dc" element="date" qualifier="available">2021-04-27T12:46:35Z</dim:field>
<dim:field mdschema="dc" element="date" qualifier="issued">2021</dim:field>
<dim:field mdschema="dc" element="identifier" qualifier="citation" lang="es">Marqués, L. A., Aboy, M., López, P., Santos, I., Pelaz, L., Fisicaro, G. Atomistic modeling of laser-related phenomena. In: Laser Annealing Processes in Semiconductor Technology Theory, Modeling and Applications in Nanoelectronics Woodhead Publishing Series in Electronic and Optical Materials, 2021, Pages 79-136</dim:field>
<dim:field mdschema="dc" element="identifier" qualifier="isbn" lang="es">978-0-12-820255-5</dim:field>
<dim:field mdschema="dc" element="identifier" qualifier="uri">http://uvadoc.uva.es/handle/10324/46388</dim:field>
<dim:field mdschema="dc" element="description" lang="es">Producción Científica</dim:field>
<dim:field mdschema="dc" element="description" qualifier="abstract" lang="es">Due to the intrinsic features of laser annealing treatments in semiconductors, i.e., localized irradiation with a space- and time-dependent thermal field that leads to far-from-equilibrium conditions, experimental analysis can reveal only specimen postirradiation characteristics. In order to understand how the laser-irradiated system evolves and reaches its final state, a theoretical work based on full process simulation is required. Traditional models for laser processing simulation were based on continuum techniques. However, they prove to be insufficient at the nanoscale. Atomistic simulation techniques, in turn, are handy for studying detailed interactions, at both electronic and atomic levels, including out-of-equilibrium situations as those present in laser processing. In this chapter, we review the main techniques for atomistic simulation to be applied for laser modeling. We also present some recent results on atomistic modeling of laser-related phenomena in Si, in particular melting and regrowth processes, defect and dopant kinetics, dopant segregation, and the anomalous formation of extended defects.</dim:field>
<dim:field mdschema="dc" element="format" qualifier="mimetype" lang="es">application/pdf</dim:field>
<dim:field mdschema="dc" element="language" qualifier="iso" lang="es">eng</dim:field>
<dim:field mdschema="dc" element="publisher" lang="es">Elsevier</dim:field>
<dim:field mdschema="dc" element="rights" qualifier="accessRights" lang="es">info:eu-repo/semantics/openAccess</dim:field>
<dim:field mdschema="dc" element="rights" qualifier="uri" lang="*">http://creativecommons.org/licenses/by-nc-nd/4.0/</dim:field>
<dim:field mdschema="dc" element="rights" qualifier="holder" lang="es">© 2021 Elsevier</dim:field>
<dim:field mdschema="dc" element="rights" lang="*">Attribution-NonCommercial-NoDerivatives 4.0 Internacional</dim:field>
<dim:field mdschema="dc" element="subject" qualifier="classification" lang="es">Dinámica molecular</dim:field>
<dim:field mdschema="dc" element="subject" qualifier="classification" lang="es">Molecular dynamics</dim:field>
<dim:field mdschema="dc" element="subject" qualifier="classification" lang="es">Simulación atomística</dim:field>
<dim:field mdschema="dc" element="subject" qualifier="classification" lang="es">Atomistic simulation</dim:field>
<dim:field mdschema="dc" element="title" lang="es">Atomistic modeling of laser-related phenomena</dim:field>
<dim:field mdschema="dc" element="type" lang="es">info:eu-repo/semantics/bookPart</dim:field>
<dim:field mdschema="dc" element="type" qualifier="hasVersion" lang="es">info:eu-repo/semantics/acceptedVersion</dim:field>
<dim:field mdschema="dc" element="relation" qualifier="publisherversion" lang="es">https://www.sciencedirect.com/science/article/pii/B9780128202555000039</dim:field>
</dim:dim></metadata></record></GetRecord></OAI-PMH>