2026-04-27T13:01:04Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/466002025-01-21T11:00:18Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

Kahro, Tauno Tarre, Aivar Käämbre, Tanel Piirsoo, Helle-Mai Kozlova, Jekaterina Ritslaid, Peeter Kasikov, Aarne Jõgiaas, Taivo Vinuesa Sanz, Guillermo Dueñas Carazo, Salvador Castán Lanaspa, María Helena Tamm, Aile Kukli, Kaupo 2021-05-14T10:52:55Z 2021-05-14T10:52:55Z 2021 ACS Applied Nano Materials, 2021. In press. 12 p. 2574-0970 http://uvadoc.uva.es/handle/10324/46600 10.1021/acsanm.1c00587 Producción Científica Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the deposition of the HfO2 overlayer, to the HfO2 bottom dielectric layer pregrown on the Si/TiN substrate. Either HfCl4 or Hf[N(CH3)(C2H5)]4 was used as the metal precursor for the bottom layer. The O2 plasma-assisted process was applied for growing HfO2 from Hf[N(CH3)(C2H5)]4 also on the top of graphene. To improve graphene transfer, the effects of the surface pretreatments of the as-grown and aged Si/TiN/HfO2 substrates were studied and compared. The graphene layer retained its integrity after the plasma processes. Studies on resistive switching on HfO2-graphene-HfO2 nanostructures revealed that the operational voltage ranges in the graphene-HfO2 stacks were modified together with the ratios between high- and low-resistance states. Fondo Europeo de Desarrollo Regional (projects TK134 and TK141) Ministerio de Economía, Industria y Competitividad (project TEC2017-84321-C4-2-R) Estonian Research Agency (projects PRG4 and PRG753) application/pdf eng ACS Publications info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2021 ACS Publications Attribution-NonCommercial-NoDerivatives 4.0 Internacional Graphene Grafeno Atomic layer deposition Deposición atómica de capas Hafnium oxide Óxido de hafnio Stacked nanostructures Nanoestructuras apiladas Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion https://pubs.acs.org/doi/10.1021/acsanm.1c00587 SI