2026-04-27T12:42:52Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/466002025-01-21T11:00:18Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media Kahro, Tauno Tarre, Aivar Käämbre, Tanel Piirsoo, Helle-Mai Kozlova, Jekaterina Ritslaid, Peeter Kasikov, Aarne Jõgiaas, Taivo Vinuesa Sanz, Guillermo Dueñas Carazo, Salvador Castán Lanaspa, María Helena Tamm, Aile Kukli, Kaupo Producción Científica Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the deposition of the HfO2 overlayer, to the HfO2 bottom dielectric layer pregrown on the Si/TiN substrate. Either HfCl4 or Hf[N(CH3)(C2H5)]4 was used as the metal precursor for the bottom layer. The O2 plasma-assisted process was applied for growing HfO2 from Hf[N(CH3)(C2H5)]4 also on the top of graphene. To improve graphene transfer, the effects of the surface pretreatments of the as-grown and aged Si/TiN/HfO2 substrates were studied and compared. The graphene layer retained its integrity after the plasma processes. Studies on resistive switching on HfO2-graphene-HfO2 nanostructures revealed that the operational voltage ranges in the graphene-HfO2 stacks were modified together with the ratios between high- and low-resistance states. 2021-05-14T10:52:55Z 2021-05-14T10:52:55Z 2021 info:eu-repo/semantics/article ACS Applied Nano Materials, 2021. In press. 12 p. 2574-0970 http://uvadoc.uva.es/handle/10324/46600 10.1021/acsanm.1c00587 eng https://pubs.acs.org/doi/10.1021/acsanm.1c00587 info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2021 ACS Publications Attribution-NonCommercial-NoDerivatives 4.0 Internacional ACS Publications SI