2026-04-14T17:27:43Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/486002025-01-21T11:01:45Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

González Ossorio, Óscar Vinuesa Sanz, Guillermo García García, Héctor Sahelices Fernández, Benjamín Dueñas Carazo, Salvador Castán Lanaspa, María Helena Pérez, Eduardo Kalishettyhalli Mahadevaiah, Mamathamba Wenger, Christian 2021-09-06T09:24:26Z 2021-09-06T09:24:26Z 2021 ECS Journal of Solid State Science and Technology, 2021, vol.10, n. 8, p. 083002 2162-8769 https://uvadoc.uva.es/handle/10324/48600 10.1149/2162-8777/ac175c 083002 8 ECS Journal of Solid State Science and Technology 10 2162-8777 The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and non-volatile character. They are particularly appealing as they are good candidates for substituting flash memories. In this work, the performance of the MIM structure that takes part of a 4 kbit memory array based on 1-transistor-1-resistance (1T1R) cells was studied in terms of control of intermediate states and cycle durability. DC and small signal experiments were carried out in order to fully characterize the devices, which presented excellent multilevel capabilities and resistive-switching behavior. eng info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2021 ECS - The Electrochemical Society Attribution-NonCommercial-NoDerivatives 4.0 Internacional Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications info:eu-repo/semantics/article