2026-04-26T23:39:58Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/486212025-01-21T11:01:54Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

González Ossorio, Óscar Vinuesa Sanz, Guillermo García García, Héctor Sahelices Fernández, Benjamín Dueñas Carazo, Salvador Castán Lanaspa, María Helena Pérez, Eduardo Kalishettyhalli Mahadevaiah, Mamathamba Wenger, Christian 2021-09-07T11:33:50Z 2021-09-07T11:33:50Z 2021 ECS Transactions, 2021, vol. 102, n. 2, p. 29-35 1938-5862 https://uvadoc.uva.es/handle/10324/48621 10.1149/10202.0029ecst 29 2 35 ECS Transactions 102 1938-6737 Producción Científica The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and non-volatile character. They are particularly appealing as they are good candidates for substituting flash memories. In this work, the performance of the MIM structure that takes part of a 4 kbit memory array based on 1-transistor-1-resistance (1T1R) cells was studied in terms of control of intermediate states and cycle durability. DC and small signal experiments were carried out in order to fully characterize the devices, which presented excellent multilevel capabilities and resistive-switching behavior. Ministerio de Ciencia, Innovación y Universidades (Grant, TEC2017-84321-C4-2-R ) Fondos Feder y la Deutsche Forschungsgemeinschaft (German Research Foundation) ( with Project-ID 434 434 223- SFB1461) The Federal Ministry of Education and Research of Germany under (grant number 16ES1002) application/pdf eng Electrochemical Society info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2021 ECS - The Electrochemical Society Attribution-NonCommercial-NoDerivatives 4.0 Internacional RRAM Hafnium oxide Óxido de hafnio Neuromorphic Applications Aplicaciones neuromórficas 22 Física 2210.05 Electroquímica 33 Ciencias Tecnológicas Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion https://iopscience.iop.org/article/10.1149/10202.0029ecst SI