2026-04-27T21:28:25Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/486332025-01-21T10:59:38Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

00925njm 22002777a 4500 dc Vinuesa Sanz, Guillermo author González Ossorio, Óscar author García García, Héctor author Sahelices Fernández, Benjamín author Castán Lanaspa, María Helena author Dueñas Carazo, Salvador author Kukli, Kaupo author Kull, M author Tarre, Aivar author Jõgiaas, Taivo author Tamm, Aile author Kasikov, Aarne author 2021 Resistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report electrical characterization of HfO2:Al2O3based metal-insulator–metal structures devised using atomic layer deposition. Dependences of electrical behavior on HfO2:Al2O3 cycle ratio is studied. An explanation for the differences between the Resistive Switching properties of the samples is proposed, based on the distribution of HfAlOx layers of the sample. Dependence of the RS properties of the samples on their growth temperature is discussed. Solid-State Electronics, 2021, vol. 183, p.108085 0038-1101 https://uvadoc.uva.es/handle/10324/48633 10.1016/j.sse.2021.108085 108085 Solid-State Electronics 183 Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices