2026-04-26T20:14:50Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/486332025-01-21T10:59:38Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices Vinuesa Sanz, Guillermo González Ossorio, Óscar García García, Héctor Sahelices Fernández, Benjamín Castán Lanaspa, María Helena Dueñas Carazo, Salvador Kukli, Kaupo Kull, M Tarre, Aivar Jõgiaas, Taivo Tamm, Aile Kasikov, Aarne Producción Científica Resistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report electrical characterization of HfO2:Al2O3based metal-insulator–metal structures devised using atomic layer deposition. Dependences of electrical behavior on HfO2:Al2O3 cycle ratio is studied. An explanation for the differences between the Resistive Switching properties of the samples is proposed, based on the distribution of HfAlOx layers of the sample. Dependence of the RS properties of the samples on their growth temperature is discussed. 2021-09-10T10:26:49Z 2021-09-10T10:26:49Z 2021 info:eu-repo/semantics/article Solid-State Electronics, 2021, vol. 183, p.108085 0038-1101 https://uvadoc.uva.es/handle/10324/48633 10.1016/j.sse.2021.108085 108085 Solid-State Electronics 183 eng https://www.sciencedirect.com/science/article/pii/S0038110121001301 info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2021 Elsevier Attribution-NonCommercial-NoDerivatives 4.0 Internacional Elsevier SI