2026-04-30T04:58:27Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/486392025-01-21T11:03:20Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

García García, Héctor Vinuesa Sanz, Guillermo González Ossorio, Óscar Sahelices Fernández, Benjamín Castán Lanaspa, María Helena Dueñas Carazo, Salvador Bargalló González, Mireia Campabadal Segura, Francesca 2021-09-13T11:42:22Z 2021-09-13T11:42:22Z 2021 Solid-State Electronics, 2021, vol. 183, p. 108113 0038-1101 https://uvadoc.uva.es/handle/10324/48639 10.1016/j.sse.2021.108113 108113 Solid-State Electronics 183 In this work, we have studied the set and the reset transitions in hafnium oxide-based metal-insulator-metal ReRAM devices using a capacitor discharge. Instead of applying a conventional voltage or current signal, we have discharged a capacitor through the devices to perform both transitions. In this way, both transitions are shown to be controllable. An accumulative process is observed if we apply consecutive discharges, and, when increasing the capacitor voltage in each discharge, the transitions between both resistance states are complete. In addition, it has been shown that faster transitions require larger capacitor voltages. eng info:eu-repo/semantics/openAccess © 2021 Elsevier Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge info:eu-repo/semantics/article