2026-05-05T22:09:09Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/493992025-05-14T09:18:38Zcom_10324_1158com_10324_931com_10324_894col_10324_1242

00925njm 22002777a 4500 dc Landesman, Jean-Pierre author Goktas, Nebile Isik author LaPierre, Ray R. author Ghanad-Tavakoli, Shahram author Pargon, Erwine author Petit-Etienne, Camille author Levallois, Christophe author Jiménez López, Juan Ignacio author Dadgostar, Shabnam author 2020 Photoluminescence and cathodoluminescence spectral imaging were performed across rectangular stripes etched in samples with InAsxP1-x quantum wells of constant thickness and variable composition grown on InP. In particular, the effects of different etching chemistries (CH4/H2/Ar and Cl2/CH4/Ar) were investigated. The results discussed deal with modifications of the luminescence line shapes (which differ with etching process) and with the intensity variation of the emissions associated with the quantum wells across the stripes. The possible origins of these effects are investigated in terms of carrier recombination on the vertical sidewalls of the stripes and lateral diffusion of species from the plasma during etching. Cathodoluminescence measurements on samples under DC-bias also show the quantum confined Stark effect which is correlated to the material modifications induced by the etching. ECS Transactions, 2020, vol. 97, n. 2. p. 43-55 1938-5862 https://uvadoc.uva.es/handle/10324/49399 10.1149/09702.0043ecst Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence