2026-04-27T21:46:58Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/494142025-01-31T07:25:56Zcom_10324_1158com_10324_931com_10324_894col_10324_1242

Hinojosa, Manuel García, Iván Dadgostar, Shabnam Algora del Valle, Carlos 2021-10-26T10:54:13Z 2021-10-26T10:54:13Z 2020 IEEE Journal of Photovoltaics, 2021 ,vol 11, n. 2. p. 429-436 2156-3381 https://uvadoc.uva.es/handle/10324/49414 10.1109/JPHOTOV.2020.3043849 Producción Científica We investigate the dynamics of Zn diffusion in MOVPE-grown AlGaInP/GaInP systems by the comparison of different structures that emulate the back-surface field (BSF) and base layers of a GaInP subcell integrated into an inverted multijunction solar cell structure. Through the analysis of secondary ion mass spectroscopy, electrochemical capacitance-voltage and spectrally resolved cathodoluminescence measurements, we provide experimental evidence that 1) the Zn diffusion is enhanced by point defects injected during the growth of the tunnel junction cathode layer; 2) the intensity of the process is determined by the cathode doping level and it happens for different cathode materials; 3) the mobile Zn is positively charged; and 4) the diffusion mechanism reduces the CuPt ordering in GaInP. We demonstrate that using barrier layers the diffusion of point defects can be mitigated, so that they do not reach Zn-doped layers, preventing its diffusion. Finally, the impact of Zn diffusion on solar cells with different Zn-profiles is evaluated by comparing the electrical I-V curves at different concentrations. The results rule out the introduction of internal barriers in the BSF but illustrate how Zn diffusion under typical growth condition can reach the emitter and dramatically affect the series resistance, among other effects. Ministerio de Economía, Industria y Competitividad (project TEC2017-83447-P) Comunidad de Madrid (project Y2018/EMT-4892) Ministerio de Educación, Cultura y Deporte (grant FPU15/03436) Programa Estatal de Promoción del Talento y su Empleabilidad through a Ramon y Cajal grant (grant RYC-2014-15621) Junta de Castilla y León - Fondo Europeo de Desarrollo Regional (project VA283P18) application/pdf eng IEEE Xplore info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ © 2021 IEEE Xplore Attribution-NonCommercial-NoDerivatives 4.0 Internacional Epitaxy Epitaxia Multijunction solar cells Células fotovoltaicas multiunión Zinc diffusion Difusión de zinc Point-Defects Assisted Zn-Diffusion in AlGaInP/GaInP Systems During the MOVPE Growth of Inverted Multijunction Solar Cells info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion https://ieeexplore.ieee.org/document/9306806 SI