2026-05-05T10:24:35Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/494542025-01-31T07:24:21Zcom_10324_1158com_10324_931com_10324_894col_10324_1242

Montedoro, Vincenzo Torres Pérez, Alfredo Dadgostar, Shabnam Jiménez López, Juan Ignacio Bosi, Matteo Parisini, Antonella Fornari, Roberto 2021 Producción Científica Cathodoluminescence (CL) investigations are performed on nominally undoped and Si-doped ε-Ga2O3 samples grown by metal-organic vapor phase epitaxy on (0001)-Al2O3 substrates, using different carrier gases. All films exhibit a broad low-temperature CL emission extending over the photon energy range 2–3.4 eV. Emission deconvolution suggests that four narrower bands centered at about 2.4, 2.75, 3.0 and 3.15 eV may well account for the broad band. While the position of these peaks results independent of the growth conditions, significant intensity differences are observed. A general reduction of the broad emission is evidenced as the Si concentration increases. No band-to-band recombination is observed. Temperature dependence of the CL signal shows a trend consistent with radiative transitions from the CB to deep acceptor states, probably of intrinsic nature. application/pdf https://uvadoc.uva.es/handle/10324/49454 eng Elsevier Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films info:eu-repo/semantics/article TEXT UVaDOC. Repositorio Documental de la Universidad de Valladolid Hispana