2026-04-27T19:45:36Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/494612025-01-31T07:26:24Zcom_10324_1158com_10324_931com_10324_894col_10324_1242

00925njm 22002777a 4500 dc García, Iván author Barrutia, Laura author Dadgostar, Shabnam author Hinojosa, Manuel author Johnson, Andrew author Rey Stolle, Ignacio author 2021 Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical analysis performed using realistic device parameters indicates that the GaInAs middle cell can be drastically thinned to 1000 nm while increasing its In content to 8% with an efficiency loss in the 3-junction cell below 3%. The experimental results show that the formation of macroscopic cracks is prevented in thinned GaInAs/Ge 2-junction and GaInP/GaInAs/Ge 3-junction cells. These prototype crack-free multijunction cells demonstrate the concept and were used to rule out any possible component integration issue. The performance metrics are limited by the high threading dislocation density over 2·107cm−2 in the virtual substrates used, but an almost current matched, crack-free, thinned 3-junction solar cell is demonstrated, and the pathway towards solar cells with higher voltages identified. Solar Energy Materials and Solar Cells, 2021, vol. 225, 111034 0927-0248 https://uvadoc.uva.es/handle/10324/49461 10.1016/j.solmat.2021.111034 Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates