<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-05-05T21:53:17Z</responseDate><request verb="GetRecord" identifier="oai:uvadoc.uva.es:10324/52827" metadataPrefix="qdc">https://uvadoc.uva.es/oai/request</request><GetRecord><record><header><identifier>oai:uvadoc.uva.es:10324/52827</identifier><datestamp>2023-06-06T12:01:52Z</datestamp><setSpec>com_10324_1158</setSpec><setSpec>com_10324_931</setSpec><setSpec>com_10324_894</setSpec><setSpec>col_10324_1244</setSpec></header><metadata><qdc:qualifieddc xmlns:qdc="http://dspace.org/qualifieddc/" xmlns:doc="http://www.lyncode.com/xoai" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://purl.org/dc/elements/1.1/ http://dublincore.org/schemas/xmls/qdc/2006/01/06/dc.xsd http://purl.org/dc/terms/ http://dublincore.org/schemas/xmls/qdc/2006/01/06/dcterms.xsd http://dspace.org/qualifieddc/ http://www.ukoln.ac.uk/metadata/dcmi/xmlschema/qualifieddc.xsd">
<dc:title>A study of the electrical activity of crystal defects in multicrystalline si</dc:title>
<dc:creator>Jimenez, Marta</dc:creator>
<dc:creator>Moretón Fernández, Ángel</dc:creator>
<dc:creator>Colina, Juan Manuel</dc:creator>
<dc:creator>Martínez Sacristán, Óscar</dc:creator>
<dc:creator>González Rebollo, Miguel Ángel</dc:creator>
<dc:creator>Jiménez López, Juan Ignacio</dc:creator>
<dcterms:abstract>- The electrical activity of the extended defects is greatly influenced by the presence of metallic impurities.&#xd;
- The activity of GBs depends on the background metallic impurities, as [M] decreases the GBs loss its electrical activity.&#xd;
- Instead, the sub-grain boundaries present a higher electrical activity, even if [M] is reduced.&#xd;
- The measure of the diffusion length in the presence of high concentrations of metallic impurities can be misleading.</dcterms:abstract>
<dcterms:dateAccepted>2022-04-19T08:51:58Z</dcterms:dateAccepted>
<dcterms:available>2022-04-19T08:51:58Z</dcterms:available>
<dcterms:created>2022-04-19T08:51:58Z</dcterms:created>
<dcterms:issued>2019</dcterms:issued>
<dc:type>info:eu-repo/semantics/conferenceObject</dc:type>
<dc:identifier>Defects-Recognition, Imaging and Physics in Semiconductors (DRIP) XVIII, Berlín, Alemania, 2019</dc:identifier>
<dc:identifier>https://uvadoc.uva.es/handle/10324/52827</dc:identifier>
<dc:language>eng</dc:language>
<dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
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