2026-04-28T20:56:20Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/590922025-01-21T11:00:35Zcom_10324_43510com_10324_954com_10324_894com_10324_1148com_10324_931col_10324_43513col_10324_1270

García García, Héctor Boo Alvarez, Jonathan Vinuesa Sanz, Guillermo González Ossorio, Óscar Sahelices Fernández, Benjamín Dueñas Carazo, Salvador Castán Lanaspa, María Helena Bargalló González, Mireia Campabadal Segura, Francesca 2023-04-12T12:07:19Z 2023-04-12T12:07:19Z 2021 Electronics, 2021, Vol. 10, Nº. 22, 2816 2079-9292 https://uvadoc.uva.es/handle/10324/59092 10.3390/electronics10222816 2816 22 Electronics 10 2079-9292 Producción Científica In the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After performing an electroforming process at room temperature, the device was cooled in a cryostat to carry out 100 current–voltage cycles at several temperatures ranging from the “liquid nitrogen temperature” to 350 K. The measurements showed a semiconducting behavior in high and low resistance states. In the low resistance state, a hopping conduction mechanism was obtained. The set and reset voltages increased when temperature decreased because the thermal energies for oxygen vacancies and ions were reduced. However, the temperature did not influence the power absorbed in the reset transition, indicating the local temperature in the filament controls the transition. The set transition turned from gradual to abrupt when decreasing the temperature, due to a positive feedback between the current increase and the Joule heating at low temperatures. Ministerio de Economía, Industria y Competitividad - Fondo Europeo de Desarrollo Regional (Projects TEC2017-84321-C4-2-R and TEC2017-84321-C4-1-R) application/pdf eng MDPI info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/4.0/ © 2021 The authors Atribución 4.0 Internacional Electric resistors Switching circuits Electronic Circuits and Devices Resistive switching ReRAM devices Neuromorphic computing Conduction mechanisms 2202.03 Electricidad Influences of the temperature on the electrical properties of HfO2-based resistive switching devices info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion https://www.mdpi.com/2079-9292/10/22/2816 SI