2026-04-27T12:25:38Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/590922025-01-21T11:00:35Zcom_10324_43510com_10324_954com_10324_894com_10324_1148com_10324_931col_10324_43513col_10324_1270

00925njm 22002777a 4500 dc García García, Héctor author Boo Alvarez, Jonathan author Vinuesa Sanz, Guillermo author González Ossorio, Óscar author Sahelices Fernández, Benjamín author Dueñas Carazo, Salvador author Castán Lanaspa, María Helena author Bargalló González, Mireia author Campabadal Segura, Francesca author 2021 In the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After performing an electroforming process at room temperature, the device was cooled in a cryostat to carry out 100 current–voltage cycles at several temperatures ranging from the “liquid nitrogen temperature” to 350 K. The measurements showed a semiconducting behavior in high and low resistance states. In the low resistance state, a hopping conduction mechanism was obtained. The set and reset voltages increased when temperature decreased because the thermal energies for oxygen vacancies and ions were reduced. However, the temperature did not influence the power absorbed in the reset transition, indicating the local temperature in the filament controls the transition. The set transition turned from gradual to abrupt when decreasing the temperature, due to a positive feedback between the current increase and the Joule heating at low temperatures. Electronics, 2021, Vol. 10, Nº. 22, 2816 2079-9292 https://uvadoc.uva.es/handle/10324/59092 10.3390/electronics10222816 2816 22 Electronics 10 2079-9292 Electric resistors Switching circuits Electronic Circuits and Devices Influences of the temperature on the electrical properties of HfO2-based resistive switching devices