2026-05-05T21:35:12Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/629182026-03-17T09:31:27Zcom_10324_43510com_10324_954com_10324_894com_10324_1148com_10324_931col_10324_43513col_10324_1270

Maldonado, D Vinuesa Sanz, Guillermo Aldana, S Aguirre, F.L. Cantudo, A García García, Héctor González, M. B. Jiménez Molinos, Francisco Campabadal Segura, Francesca Miranda, Enrique Dueñas Carazo, Salvador Castán Lanaspa, María Helena Roldán, J.B. Dynamical systems Circuits and Systems Producción Científica The switching dynamics of TiN/Ti/HfO2/W-based resistive memories is investigated. The analysis consisted in the systematic application of voltage sweeps with different ramp rates and temperatures. The obtained results give clear insight into the role played by transient and thermal effects on the device operation. Both kinetic Monte Carlo simulations and a compact modeling approach based on the Dynamic Memdiode Model are considered in this work with the aim of assessing, in terms of their respective scopes, the nature of the physical processes that characterize the formation and rupture of the filamentary conducting channel spanning the oxide film. As a result of this study, a better understanding of the different facets of the resistive switching dynamics is achieved. It is shown that the temperature and, mainly, the applied electric field, control the switching mechanism of our devices. The Dynamic Memdiode Model, being a behavioral analytic approach, is shown to be particularly suitable for reproducing the conduction characteristics of our devices using a single set of parameters for the different operation regimes. 2023-11-14 2023-11-14 2024 info:eu-repo/semantics/article Materials Science in Semiconductor Processing, 2024, vol. 169, 107878 1369-8001 https://uvadoc.uva.es/handle/10324/62918 10.1016/j.mssp.2023.107878 107878 Materials Science in Semiconductor Processing 169 eng https://www.sciencedirect.com/science/article/pii/S1369800123005711 info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by/4.0/ © 2023 The Authors Atribución 4.0 Internacional Elsevier