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<dc:creator>Weissker, Hans-Christian</dc:creator>
<dc:creator>Huotari, Simo</dc:creator>
<dc:creator>Bruneval, Fabien</dc:creator>
<dc:creator>Sottile, Francesco</dc:creator>
<dc:creator>Monaco, Giulio</dc:creator>
<dc:creator>Krisch, Michael</dc:creator>
<dc:creator>Olevano, Valerio</dc:creator>
<dc:creator>Reining, Lucia</dc:creator>
<dc:creator>Serrano Gutiérrez, Jorge</dc:creator>
<dc:date>2006</dc:date>
<dc:description>We present an investigation of the dynamic structure factor and of the dielectric function εM(Q,ω) of the prototypical semiconductor silicon for finite momentum transfer, combining inelastic x-ray scattering experiments and ab initio calculations. In contrast with optical spectra, for finite momentum transfer time-dependent density-functional theory in the adiabatic local-density approximation together with lifetime broadening describes the physics of valence excitations correctly. Major structures in the spectra, governed by short-range crystal and exchange-correlation local-field effects, are strongly influenced by a mixing of transitions of positive and negative energies, in striking difference to spectra for vanishing momentum transfer. This mixing gives rise to a pronounced Fano asymmetry.</dc:description>
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<dc:publisher>American Physical Society</dc:publisher>
<dc:title>Signatures of Short-Range Many-Body Effects in the Dielectric Function of Silicon for Finite Momentum Transfer</dc:title>
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