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2024-01-30T12:30:26Z urn:hdl:10324/65323 Phonons in SiC from INS, IXS, and Ab-Initio Calculations Strauch, Dieter Dorner, B. Ivanov, A.A. Krisch, M. Bosak, A. Choyke, Wolfgang J. Stojetz, B. Malorny, Michael Serrano Gutiérrez, Jorge Preliminary results for the phonon dispersion curves of hexagonal 4H-SiC from experimental inelastic neutron (INS) and X-ray scattering (IXS) are reported and contrasted with those of cubic 3C-SiC and silicon. The experimental frequencies and scattering intensities are in excellent agreement with those from first-principles calculations using density-functional methods. The relative merits of the two experimental techniques and aspects of the density functional perturbation theory and the so-called frozen phonon method for the determination of the basic phonon properties are briefly outlined. 2024-01-30T12:30:26Z 2024-01-30T12:30:26Z 2006 info:eu-repo/semantics/article Materials Science Forum Vols 527-529 (2006) pp 689-694 https://uvadoc.uva.es/handle/10324/65323 10.4028/www.scientific.net/MSF.527-529.689 689 694 Materials Science Forum 527-529 1662-9752 eng info:eu-repo/semantics/openAccess Trans Tech Publications Ltd.