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<dc:title>Pressure dependence of the lattice dynamics of ZnO: Anab initioapproach</dc:title>
<dc:creator>Romero, A. H.</dc:creator>
<dc:creator>Manjón, F. J.</dc:creator>
<dc:creator>Lauck, R.</dc:creator>
<dc:creator>Cardona, M.</dc:creator>
<dc:creator>Rubio, A.</dc:creator>
<dc:creator>Serrano Gutiérrez, Jorge</dc:creator>
<dc:description>We have performed first-principles calculations of the electronic structure of ZnO, and applied them to the determination of structural and lattice-dynamical properties and their dependence on pressure. The dynamical matrices have been obtained for the wurtzite, zinc-blende, and rocksalt modifications with several lattice parameters optimized for pressures up to 12 GPa. These matrices are employed to calculate the one-phonon densities of states (DOS) and the two-phonon DOS associated with either sums or differences of phonons. These results provide the essential tools to analyze the effect of isotope-induced mass disorder and anharmonicity on phonon linewidths, which we discuss here and compare with experimental data from Raman spectroscopy, including first- and second-order spectra. Agreement of calculated properties with experimental results improves considerably when the renormalization due to anharmonicity is subtracted from the experimental data.</dc:description>
<dc:date>2024-01-30T12:50:22Z</dc:date>
<dc:date>2024-01-30T12:50:22Z</dc:date>
<dc:date>2004</dc:date>
<dc:type>info:eu-repo/semantics/article</dc:type>
<dc:identifier>Phys. Rev. B 69, 094306 (2004)</dc:identifier>
<dc:identifier>1098-0121</dc:identifier>
<dc:identifier>https://uvadoc.uva.es/handle/10324/65334</dc:identifier>
<dc:identifier>10.1103/PhysRevB.69.094306</dc:identifier>
<dc:identifier>9</dc:identifier>
<dc:identifier>Physical Review B</dc:identifier>
<dc:identifier>69</dc:identifier>
<dc:identifier>1550-235X</dc:identifier>
<dc:language>eng</dc:language>
<dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
<dc:publisher>American Physical Society</dc:publisher>
<dc:peerreviewed>SI</dc:peerreviewed>
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