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oai:uvadoc.uva.es:10324/653432025-02-13T09:48:19Zcom_10324_1158com_10324_931com_10324_894col_10324_1242

Strempfer, J. Cardona, M. Schwoerer-Böhning, M. Requardt, H. Lorenzen, M. Stojetz, B. Pavone, P. Choyke, Wolfgang J. Serrano Gutiérrez, Jorge 2024-01-30T13:24:23Z 2024-01-30T13:24:23Z 2003 Materials Science Forum Vols 433-436 (2003) pp 257-260 https://uvadoc.uva.es/handle/10324/65343 10.4028/www.scientific.net/MSF.433-436.257 257 260 Materials Science Forum 433-436 1662-9752 We have measured the phonon dispersion relations of 4H-SiC by inelastic x-ray scattering (IXS) using monochromatized synchrotron radiation. The q-space directions Gamma-K-M, Gamma-M, and Gamma-A were mapped out. Lattice dynamical calculations that allowed the prediction of phonon eigenvectors, as well as their symmetries, also helped in choosing the best scattering geometries. The IXS phonon data are compared with those previously obtained from low temperature photoluminescence measurements and from laser Raman spectroscopy. eng info:eu-repo/semantics/openAccess Lattice dynamics of 4H-SiC by inelastic X-Ray scattering info:eu-repo/semantics/article