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oai:uvadoc.uva.es:10324/653662025-02-13T09:53:13Zcom_10324_1158com_10324_931com_10324_894col_10324_1242

Wysmolek, A Ruf, T Cardona, M Serrano Gutiérrez, Jorge 1999 We report calculations of the Γ8–Γ7 spin–orbit splittings of substitutional acceptor levels in silicon and diamond and corresponding Raman measurements for Si : X (X=B, Al, Ga, In). The calculations were performed using a Green's function method based on a full-zone 30×30 k.p Hamiltonian together with a Slater–Koster ansatz for the acceptor potential. The results are in reasonable agreement with experimental data. application/pdf https://uvadoc.uva.es/handle/10324/65366 eng Elsevier Spin–orbit splitting of acceptor states in Si and C info:eu-repo/semantics/article TEXT UVaDOC. Repositorio Documental de la Universidad de Valladolid Hispana