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Spin–orbit splitting of acceptor states in Si and C Wysmolek, A Ruf, T Cardona, M Serrano Gutiérrez, Jorge We report calculations of the Γ8–Γ7 spin–orbit splittings of substitutional acceptor levels in silicon and diamond and corresponding Raman measurements for Si : X (X=B, Al, Ga, In). The calculations were performed using a Green's function method based on a full-zone 30×30 k.p Hamiltonian together with a Slater–Koster ansatz for the acceptor potential. The results are in reasonable agreement with experimental data. Spanish MEC Max Planck Gesellschaft 2024-01-30T14:10:44Z 2024-01-30T14:10:44Z 1999 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion Physica B 273-641 (1999) 640-643 0921-4526 https://uvadoc.uva.es/handle/10324/65366 10.1016/S0921-4526(99)00593-1 640 643 Physica B: Condensed Matter 273-274 eng info:eu-repo/semantics/openAccess application/pdf Elsevier https://uvadoc.uva.es/bitstream/10324/65366/3/1-s2.0-S0921452699005931-main.pdf.jpg Hispana TEXT http://rightsstatements.org/vocab/CNE/1.0/ UVaDOC. Repositorio Documental de la Universidad de Valladolid https://uvadoc.uva.es/handle/10324/65366