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<title>Spin–orbit splitting of acceptor states in Si and C</title>
<creator>Wysmolek, A</creator>
<creator>Ruf, T</creator>
<creator>Cardona, M</creator>
<creator>Serrano Gutiérrez, Jorge</creator>
<description>We report calculations of the Γ8–Γ7 spin–orbit splittings of substitutional acceptor levels in silicon and diamond and corresponding Raman measurements for Si : X (X=B, Al, Ga, In). The calculations were performed using a Green's function method based on a full-zone 30×30 k.p Hamiltonian together with a Slater–Koster ansatz for the acceptor potential. The results are in reasonable agreement with experimental data.</description>
<date>2024-01-30</date>
<date>2024-01-30</date>
<date>1999</date>
<type>info:eu-repo/semantics/article</type>
<identifier>Physica B 273-641 (1999) 640-643</identifier>
<identifier>0921-4526</identifier>
<identifier>https://uvadoc.uva.es/handle/10324/65366</identifier>
<identifier>10.1016/S0921-4526(99)00593-1</identifier>
<identifier>640</identifier>
<identifier>643</identifier>
<identifier>Physica B: Condensed Matter</identifier>
<identifier>273-274</identifier>
<language>eng</language>
<rights>info:eu-repo/semantics/openAccess</rights>
<publisher>Elsevier</publisher>
</thesis></metadata></record></GetRecord></OAI-PMH>