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00925njm 22002777a 4500 dc Wysmolek, A author Ruf, T author Cardona, M author Serrano Gutiérrez, Jorge author 1999 We report calculations of the Γ8–Γ7 spin–orbit splittings of substitutional acceptor levels in silicon and diamond and corresponding Raman measurements for Si : X (X=B, Al, Ga, In). The calculations were performed using a Green's function method based on a full-zone 30×30 k.p Hamiltonian together with a Slater–Koster ansatz for the acceptor potential. The results are in reasonable agreement with experimental data. Physica B 273-641 (1999) 640-643 0921-4526 https://uvadoc.uva.es/handle/10324/65366 10.1016/S0921-4526(99)00593-1 640 643 Physica B: Condensed Matter 273-274 Spin–orbit splitting of acceptor states in Si and C