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oai:uvadoc.uva.es:10324/653662025-02-13T09:53:13Zcom_10324_1158com_10324_931com_10324_894col_10324_1242

Wysmolek, A Ruf, T Cardona, M Serrano Gutiérrez, Jorge 2024-01-30T14:10:44Z 2024-01-30T14:10:44Z 1999 Physica B 273-641 (1999) 640-643 0921-4526 https://uvadoc.uva.es/handle/10324/65366 10.1016/S0921-4526(99)00593-1 640 643 Physica B: Condensed Matter 273-274 We report calculations of the Γ8–Γ7 spin–orbit splittings of substitutional acceptor levels in silicon and diamond and corresponding Raman measurements for Si : X (X=B, Al, Ga, In). The calculations were performed using a Green's function method based on a full-zone 30×30 k.p Hamiltonian together with a Slater–Koster ansatz for the acceptor potential. The results are in reasonable agreement with experimental data. eng info:eu-repo/semantics/openAccess Spin–orbit splitting of acceptor states in Si and C info:eu-repo/semantics/article