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oai:uvadoc.uva.es:10324/659682026-03-17T09:33:37Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

Dueñas Carazo, Salvador Castán Lanaspa, María Helena García García, Héctor Miranda, Enrique González, M.B. Campabadal Segura, Francesca 2024-02-08T09:37:36Z 2024-02-08T09:37:36Z 2017 Microelectronic Engineering, 2017, Vol. 178, p. 30-33 0167-9317 https://uvadoc.uva.es/handle/10324/65968 10.1016/j.mee.2017.04.020 30 33 Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices 178 Producción Científica Similarly to the current, the admittance of TiN/Ti/HfO2/W-based resistive memories shows well-defined minor switching loops associated with partial transitions between the ON and OFF states. Excellent control of the intermediate states is achieved in these samples by means of a proper sequence of input signals and current compliances. It is shown that, as the resistance state of the conductive filament changes, the associated susceptance also exhibits multilevel response. Susceptance values are negative in the ON state, indicating an inductive behavior of the conductive filaments. Ministry of Economy and Competitiveness and the FEDER program through projects TEC2014-52152-C3-3-R, TEC2014-52152-C3-1-R and TEC2014-54906-JIN application/pdf spa ELSEVIER info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ Attribution-NonCommercial-NoDerivatives 4.0 Internacional RRAM devices Admittance cycles Hafnium oxide Atomic layer deposition Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion https://www.sciencedirect.com/science/article/pii/S0167931717301545?via%3Dihub SI