2026-04-28T21:13:55Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/659682026-03-17T09:33:37Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

Dueñas Carazo, Salvador Castán Lanaspa, María Helena García García, Héctor Miranda, Enrique González, M.B. Campabadal Segura, Francesca 2017 Producción Científica Similarly to the current, the admittance of TiN/Ti/HfO2/W-based resistive memories shows well-defined minor switching loops associated with partial transitions between the ON and OFF states. Excellent control of the intermediate states is achieved in these samples by means of a proper sequence of input signals and current compliances. It is shown that, as the resistance state of the conductive filament changes, the associated susceptance also exhibits multilevel response. Susceptance values are negative in the ON state, indicating an inductive behavior of the conductive filaments. application/pdf https://uvadoc.uva.es/handle/10324/65968 spa ELSEVIER Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices info:eu-repo/semantics/article TEXT UVaDOC. Repositorio Documental de la Universidad de Valladolid Hispana