2026-05-05T12:05:07Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/659702024-10-04T10:35:05Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

00925njm 22002777a 4500 dc Tamm, Aile author Kalam, Kristjan author Seemen, Helina author Kozlova, Jekaterina author Kukli, Kaupo author Aarik, Jaan author Link, Joosep author Stern, Raivo author Dueñas Carazo, Salvador author Castán Lanaspa, María Helena author 2017 Mixed films of a high-permittivity oxide, Er2O3, and a magnetic material, Fe2O3, were grown by atomic layer deposition on silicon and titanium nitride at 375 °C using erbium diketonate, ferrocene, and ozone as precursors. Crystalline phases of erbium and iron oxides were formed. Growth into three-dimensional trenched structures was demonstrated. A structure deposited using tens to hundreds subsequent cycles for both constituent metal oxide layers promoted both charge polarization and saturative magnetization compared to those in the more homogeneously mixed films. ACS Omega, 2017, Vol.2, n. 12, p. 8836–8842 2470-1343 https://uvadoc.uva.es/handle/10324/65970 10.1021/acsomega.7b01394 8836 12 8842 Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films 2 2470-1343 Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films