2026-04-14T18:25:23Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/659702024-10-04T10:35:05Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

Tamm, Aile Kalam, Kristjan Seemen, Helina Kozlova, Jekaterina Kukli, Kaupo Aarik, Jaan Link, Joosep Stern, Raivo Dueñas Carazo, Salvador Castán Lanaspa, María Helena 2024-02-08T09:41:33Z 2024-02-08T09:41:33Z 2017 ACS Omega, 2017, Vol.2, n. 12, p. 8836–8842 2470-1343 https://uvadoc.uva.es/handle/10324/65970 10.1021/acsomega.7b01394 8836 12 8842 Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films 2 2470-1343 Mixed films of a high-permittivity oxide, Er2O3, and a magnetic material, Fe2O3, were grown by atomic layer deposition on silicon and titanium nitride at 375 °C using erbium diketonate, ferrocene, and ozone as precursors. Crystalline phases of erbium and iron oxides were formed. Growth into three-dimensional trenched structures was demonstrated. A structure deposited using tens to hundreds subsequent cycles for both constituent metal oxide layers promoted both charge polarization and saturative magnetization compared to those in the more homogeneously mixed films. spa info:eu-repo/semantics/openAccess http://creativecommons.org/publicdomain/zero/1.0/ CC0 1.0 Universal Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films info:eu-repo/semantics/article