2026-04-14T15:31:45Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/660712026-03-17T09:13:51Zcom_10324_43510com_10324_954com_10324_894col_10324_43513

Maldonado, D. Aguilera-Pedregosa, C. Vinuesa Sanz, Guillermo García García, Héctor Dueñas Carazo, Salvador Castán Lanaspa, María Helena Aldana, S. González, M.B. Moreno, E. Jiménez-Molinos, F. Campabadal Segura, Francesca Roldán, J.B. 2024-02-09T09:44:33Z 2024-02-09T09:44:33Z 2022 Volume 160, July 2022, 112247 0960-0779 https://uvadoc.uva.es/handle/10324/66071 10.1016/j.chaos.2022.112247 112247 Chaos, Solitons & Fractals 160 An in-depth simulation and experimental study has been performed to analyze thermal effects on the variability of resistive memories. Kinetic Monte Carlo (kMC) simulations, that reproduce well the nonlinearity and stochasticity of resistive switching devices, have been employed to explain the experimental results. The series resistance and the transition voltages and currents have been extracted from devices based on the TiN/Ti/HfO2/W stack we have fabricated and measured at temperatures ranging from 77 K to 350 K. We observed that the variability for all the magnitudes analyzed was much higher at low temperatures. In the kMC simulations, we obtained conductive filaments (CFs) with less compactness at low temperatures. This led us to explain the higher variability, based on the variations of the CF morphology and density seen at low temperatures. spa info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0/ Attribution-NonCommercial-NoDerivatives 4.0 Internacional An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices info:eu-repo/semantics/article