<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-04-14T15:23:52Z</responseDate><request verb="GetRecord" identifier="oai:uvadoc.uva.es:10324/66073" metadataPrefix="mods">https://uvadoc.uva.es/oai/request</request><GetRecord><record><header><identifier>oai:uvadoc.uva.es:10324/66073</identifier><datestamp>2024-10-04T10:33:58Z</datestamp><setSpec>com_10324_43510</setSpec><setSpec>com_10324_954</setSpec><setSpec>com_10324_894</setSpec><setSpec>col_10324_43513</setSpec></header><metadata><mods:mods xmlns:mods="http://www.loc.gov/mods/v3" xmlns:doc="http://www.lyncode.com/xoai" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-1.xsd">
<mods:name>
<mods:namePart>Picos, Rodrigo</mods:namePart>
</mods:name>
<mods:name>
<mods:namePart>Stavrinides, Stavros G.</mods:namePart>
</mods:name>
<mods:name>
<mods:namePart>Al Chawa, Mohamad Moner</mods:namePart>
</mods:name>
<mods:name>
<mods:namePart>de Benito, Carola</mods:namePart>
</mods:name>
<mods:name>
<mods:namePart>Dueñas Carazo, Salvador</mods:namePart>
</mods:name>
<mods:name>
<mods:namePart>Castán Lanaspa, María Helena</mods:namePart>
</mods:name>
<mods:name>
<mods:namePart>Hatzikraniotis, Euripides</mods:namePart>
</mods:name>
<mods:name>
<mods:namePart>Chua, Leon O.</mods:namePart>
</mods:name>
<mods:extension>
<mods:dateAvailable encoding="iso8601">2024-02-09T09:58:56Z</mods:dateAvailable>
</mods:extension>
<mods:extension>
<mods:dateAccessioned encoding="iso8601">2024-02-09T09:58:56Z</mods:dateAccessioned>
</mods:extension>
<mods:originInfo>
<mods:dateIssued encoding="iso8601">2022</mods:dateIssued>
</mods:originInfo>
<mods:identifier type="citation">Electronics 2022, 11(11), 1672: Resistive Memory Characterization, Simulation, and Compact Modeling,</mods:identifier>
<mods:identifier type="uri">https://uvadoc.uva.es/handle/10324/66073</mods:identifier>
<mods:identifier type="doi">10.3390/electronics11111672</mods:identifier>
<mods:identifier type="publicationfirstpage">1672</mods:identifier>
<mods:identifier type="publicationissue">11</mods:identifier>
<mods:identifier type="publicationtitle">Electronics</mods:identifier>
<mods:identifier type="publicationvolume">11</mods:identifier>
<mods:identifier type="essn">2079-9292</mods:identifier>
<mods:abstract>Memristors were proposed in the early 1970s by Leon Chua as a new electrical element&#xd;
linking charge to flux. Since that first introduction, these devices have positioned themselves to be&#xd;
considered as possible fundamental ones for the generations of electronic devices to come. In this&#xd;
paper, we propose a new way to investigate the effects of the electrical variables on the memristance&#xd;
of a device, and we successfully apply this technique to model the behavior of a TiN/Ti/HfO2/W&#xd;
ReRAM structure. To do so, we initially apply the Dynamic Route Map technique in the general&#xd;
case to obtain an approximation to the differential equation that determines the behaviour of the&#xd;
device. This is performed by choosing a variable of interest and observing the evolution of its own&#xd;
temporal derivative versus both its value and the applied voltage. Then, according to this technique,&#xd;
it is possible to obtain an approach to the governing equations with no need to make any assumption&#xd;
about the underlying physical mechanisms, by fitting a function to this. We have used a polynomial&#xd;
function, which allows accurate reproduction of the observed electrical behavior of the measured&#xd;
devices, by integrating the resulting differential equation system.</mods:abstract>
<mods:language>
<mods:languageTerm>spa</mods:languageTerm>
</mods:language>
<mods:accessCondition type="useAndReproduction">info:eu-repo/semantics/openAccess</mods:accessCondition>
<mods:accessCondition type="useAndReproduction">http://creativecommons.org/licenses/by-nc-nd/4.0/</mods:accessCondition>
<mods:accessCondition type="useAndReproduction">Attribution-NonCommercial-NoDerivatives 4.0 Internacional</mods:accessCondition>
<mods:titleInfo>
<mods:title>Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map</mods:title>
</mods:titleInfo>
<mods:genre>info:eu-repo/semantics/article</mods:genre>
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