2026-04-27T20:24:11Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/662352026-03-17T09:19:35Zcom_10324_43510com_10324_954com_10324_894col_10324_43515

Jimenez-Molinos, F. Vinuesa Sanz, Guillermo García García, Héctor Tarre, A. Tamm, A. Kalam, K. Kukli, K. Dueñas Carazo, Salvador Castán Lanaspa, María Helena González, M.B. Campabadal Segura, Francesca Maldonado, D. Cantudo, A. Roldán, J.B. 2024-02-13T15:44:22Z 2024-02-13T15:44:22Z 2023 2023 14th Spanish Conference on Electron Devices (CDE) 979-8-3503-0241-7 https://uvadoc.uva.es/handle/10324/66235 10.1109/CDE58627.2023.10339514 The thermal dependence of the resistance in the low resistance state of TiN/Ti/HfO 2 /Pt memristors has been experimentally studied. After modeling the measured I-V curves, the different resistive components (ohmic and non-linear) have been extracted and their thermal behavior estimated. Finally, the intrinsic series resistance linked to the metallic paths, contacts, and the remnants of the filament during resistive switching is also obtained at different temperatures. The results can be employed to propose physically-based models for circuit simulation. eng info:eu-repo/semantics/restrictedAccess Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors info:eu-repo/semantics/conferenceObject