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oai:uvadoc.uva.es:10324/665482025-02-20T07:58:09Zcom_10324_28025com_10324_954com_10324_894com_10324_1148com_10324_931col_10324_28028col_10324_1272

Santos Tejido, Iván Aboy Cebrián, María López Martín, Pedro Marqués Cuesta, Luis Alberto Martín Encinar, Luis Pelaz Montes, María Lourdes 2024-03-07T09:03:10Z 2024-03-07T09:03:10Z 2023 9999-01-01 14 Spanish Conference on Electron Devices (CDE), Valencia, Spain, 2023 979-8-3503-0240-0 https://uvadoc.uva.es/handle/10324/66548 10.1109/CDE58627.2023.10339444 Producción Científica We used ab initio calculations to characterize PnVm(n=1−6,m=1,2) clusters in crystalline Si by calculating their formation energy, dipole moment and local vibrational modes. This information served us to discuss which PnVm complexes might be more relevant in doping during epitaxial growth or by ion implantation, and their possible behavior under microwave annealing treatments that was recently demonstrated as a promising process in technological nodes beyond 3 nm. PID2020-115118GB-I00: Atomistic modeling of high energy irradiation in semiconductors, 4 p. application/pdf eng Institute of Electrical and Electronics Engineers (IEEE). info:eu-repo/semantics/restrictedAccess © IEEE Phosphorous-vacancy clusters Ab initio calculations Dipole moments Microwave annealing Crystalline Si 2202.03 Electricidad First principles characterization of PnVm clusters in crystalline silicon 14 Spanish Conference on Electron Devices (CDE) info:eu-repo/semantics/conferenceObject info:eu-repo/semantics/publishedVersion https://ieeexplore.ieee.org/document/10339444