2026-05-05T09:22:54Zhttps://uvadoc.uva.es/oai/requestoai:uvadoc.uva.es:10324/737562025-01-21T09:18:29Zcom_10324_1148com_10324_931com_10324_894col_10324_1270
Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature
Mistroni, Alberto
Jia, Ruolan
Dorai Swamy Reddy, Keerthi
Reichmann, Felix
Wenger, Christian
Perez, Eduardo
Castán Lanaspa, María Helena
Perez-Bosch Quesada, Emilio
Dueñas Carazo, Salvador
1T1R , CMOS , cryogenic temperatures , HfO2 , resistive switching , RRAM
Cryogenics
Logic gates
Switches
MOSFET
Voltage measurement
Switching circuits
Resistance
Hafnium oxide
Current measurement
Transmission electron microscopy
1T1R
CMOS
Cryogenic temperatures
HfO2
Resistive switching
RRAM
2203 Electrónica
3307.91 Microelectrónica. Tecnología del Silicio
electrónica
Producción Científica
Reliable data storage technologies able to operate at cryogenic temperatures are critical to implement scalable quantum computers and develop deep-space exploration systems, among other applications. Their scarce availability is pushing towards the development of emerging memories that can perform such storage in a non-volatile fashion. Resistive Random-Access Memories (RRAM) have demonstrated their switching capabilities down to 4K. However, their operability at lower temperatures still remain as a challenge. In this work, we demonstrate for the first time the forming and resistive switching capabilities of CMOS-compatible RRAM devices at 1.4K. The HfO2-based devices are deployed following an array of 1-transistor-1-resistor (1T1R) cells. Their switching performance at 1.4K was also tested in the multilevel-cell (MLC) approach, storing up to 4 resistance levels per cell.
10.13039/501100001659-Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) (Grant Number: 434434223-SFB1461)
10.13039/501100006730-Federal Ministry of Education and Research of Germany (Grant Number: 16ME0092)
2025-01-13T18:22:26Z
2025-01-13T18:22:26Z
2024
info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
IEEE Electron Device Letters, vol. 45, no. 12, pp. 2391-2394, Dec. 2024,
0741-3106
https://uvadoc.uva.es/handle/10324/73756
10.1109/LED.2024.3485873
2391
12
2394
IEEE Electron Device Letters
45
1558-0563
eng
https://ieeexplore.ieee.org/document/10734308
info:eu-repo/semantics/openAccess
0741-3106 © 2024 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. See https://www.ieee.org/publications/rights/index.html for more information.
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IEEE: Institute of Electrical and Electronics Engineers
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UVaDOC. Repositorio Documental de la Universidad de Valladolid
https://uvadoc.uva.es/handle/10324/73756