2026-05-05T18:36:11Zhttps://uvadoc.uva.es/oai/request

oai:uvadoc.uva.es:10324/737562025-01-21T09:18:29Zcom_10324_1148com_10324_931com_10324_894col_10324_1270

00925njm 22002777a 4500 dc Mistroni, Alberto author Jia, Ruolan author Dorai Swamy Reddy, Keerthi author Reichmann, Felix author Wenger, Christian author Perez, Eduardo author Castán Lanaspa, María Helena author Perez-Bosch Quesada, Emilio author Dueñas Carazo, Salvador author 2024 Reliable data storage technologies able to operate at cryogenic temperatures are critical to implement scalable quantum computers and develop deep-space exploration systems, among other applications. Their scarce availability is pushing towards the development of emerging memories that can perform such storage in a non-volatile fashion. Resistive Random-Access Memories (RRAM) have demonstrated their switching capabilities down to 4K. However, their operability at lower temperatures still remain as a challenge. In this work, we demonstrate for the first time the forming and resistive switching capabilities of CMOS-compatible RRAM devices at 1.4K. The HfO2-based devices are deployed following an array of 1-transistor-1-resistor (1T1R) cells. Their switching performance at 1.4K was also tested in the multilevel-cell (MLC) approach, storing up to 4 resistance levels per cell. IEEE Electron Device Letters, vol. 45, no. 12, pp. 2391-2394, Dec. 2024, 0741-3106 https://uvadoc.uva.es/handle/10324/73756 10.1109/LED.2024.3485873 2391 12 2394 IEEE Electron Device Letters 45 1558-0563 Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature